unisonic technologies co., ltd ud3018 preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r214-023.a npn power bipolar transistors ? description the utc ud3018 is an npn transistor. it uses utc?s advanced technology to provide customers with high collector-emitter breakdown voltage and high frequency, etc. the utc ud3018 is suitable for professional audio amplifiers and high-end consumer audio products, etc. ? features * high collector-emitter breakdown voltage * high frequency * excellent gain linearity ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 ud3018l-t3p-t UD3018G-T3P-T to-3p b c e tube note: pin assignment: b: base c: collector e: emitter
ud3018 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r214-023.a ? absolute maximum ratings parameter symbol ratings unit collector-base voltage v cbo 250 v collector-emitter voltage v ceo 250 v emitter-base voltage v ebo 5.0 v collector-emitter voltage - 1.5v v cex 250 v continuous collector current i c 15 a peak collector current (note 1) 30 a continuous base current i b 1.5 a total power dissipation @ t c =25c p d 150 w operating junction temperature t j -65~+150 c storage temperature range t stg -65~+150 c notes: 1. absolute maximum ratings are stress ratings only and functional device operation is not implied. absolute maximum ratings are those values beyond wh ich the device could be permanently damaged. 2. pulse test: pulse width=5.0ms, duty cycle<10%. ? thermal characteristics parameter symbol ratings unit junction-to-case jc 0.83 c/w ? electrical characteristics (t c =25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics collector-emitter sustaining voltage bv ceo ( sus ) i c =30ma, i b =0 250 v collector cut-off current i cbo v cb =250v, i e =0 10 a emitter cut-off current i ebo v eb =5.0v, i c =0 5.0 a on characteristics collector-emitter satu ration voltage v ce ( sat ) i c =5.0a, i b =0.5a 1.0 v dc current gain h fe i c =0.5a,v ce =5.0v 75 150 i c =1.0a,v ce =5.0v 75 150 i c =3.0a,v ce =5.0v 75 150 base-emitter on voltage v be ( on ) i c =5.0a, v ce =5.0v 1.2 v dynamic characteristics current-gain-bandwidth product f t i c =1.0a, v ce =5.0v, f test =1.0mhz 30 mhz output capacitance c ob v cb =10v, i e =0, f tes t =1.0mhz 400 pf
ud3018 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r214-023.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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